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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW20N120/D Designer'sTM Data Sheet Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability. Short circuit rated IGBT's are specifically suited for applications requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operation at high frequencies. * Industry Standard High Power TO-247 Package with Isolated Mounting Hole * High Speed Eoff: 160 mJ/A typical at 125C * High Short Circuit Capability - 10 ms minimum * Robust High Voltage Termination C MGW20N120 Motorola Preferred Device IGBT IN TO-247 20 A @ 90C 28 A @ 25C 1200 VOLTS SHORT CIRCUIT RATED G E G C E CASE 340F-03, Style 4 TO-247AE MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Gate Voltage (RGE = 1.0 M) Gate-Emitter Voltage -- Continuous Collector Current -- Continuous @ TC = 25C -- Continuous @ TC = 90C -- Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Mounting Torque, 6-32 or M3 screw (1) Pulse width is limited by maximum junction temperature. Repetitive rating. Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. Symbol VCES VCGR VGE IC25 IC90 ICM PD TJ, Tstg tsc RJC RJA TL Value 1200 1200 20 28 20 56 174 1.39 - 55 to 150 10 0.7 35 260 10 lbfSin (1.13 NSm) Unit Vdc Vdc Vdc Adc Apk Watts W/C C ms C/W C Preferred devices are Motorola recommended choices for future use and best overall value. (c) Motorola TMOS Motorola, Inc. 1996 Power MOSFET Transistor Device Data 1 MGW20N120 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-to-Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 25 Adc) Temperature Coefficient (Positive) Emitter-to-Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) Zero Gate Voltage Collector Current (VCE = 1200 Vdc, VGE = 0 Vdc) (VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGE = 20 Vdc, VCE = 0 Vdc) ON CHARACTERISTICS (1) Collector-to-Emitter On-State Voltage (VGE = 15 Vdc, IC = 10 Adc) (VGE = 15 Vdc, IC = 10 Adc, TJ = 125C) (VGE = 15 Vdc, IC = 20 Adc) Gate Threshold Voltage (VCE = VGE, IC = 1.0 mAdc) Threshold Temperature Coefficient (Negative) Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (1) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Switching Loss Gate Charge (VCC = 720 Vdc, IC = 20 Adc, VGE = 15 Vdc) INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead 0.25 from package to emitter bond pad) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. LE -- 13 -- nH (VCC = 720 Vdc, IC = 20 Adc, VGE = 15 Vdc, L = 300 mH RG = 20 , TJ = 125C) Energy losses include "tail" (VCC = 720 Vdc, IC = 20 Adc, VGE = 15 Vdc, L = 300 mH RG = 20 , TJ = 25C) Energy losses include "tail" td(on) tr td(off) tf Eoff td(on) tr td(off) tf Eoff QT Q1 Q2 -- -- -- -- -- -- -- -- -- -- -- -- -- 88 103 190 284 1.65 83 107 216 494 3.19 62 21 25 -- -- -- -- 3.75 -- -- -- -- -- -- -- -- mJ nC mJ ns ns (VCE = 25 Vdc, VGE = 0 Vdc, f = 1.0 MHz) Cies Coes Cres -- -- -- 1860 122 29 -- -- -- pF VCE(on) -- -- -- VGE(th) 4.0 -- gfe -- 6.0 10 12 8.0 -- -- 3.00 2.36 2.90 3.54 -- 4.99 Vdc mV/C Mhos Vdc BVCES 1200 -- BVECS ICES -- -- IGES -- -- -- -- 100 2500 250 nAdc 25 -- 870 -- -- -- -- Vdc mV/C Vdc Adc Symbol Min Typ Max Unit 2 Motorola TMOS Power MOSFET Transistor Device Data MGW20N120 TYPICAL ELECTRICAL CHARACTERISTICS 60 TJ = 25C IC, COLLECTOR CURRENT (AMPS) 50 40 12.5 V 30 20 10 0 10 V VGE = 20 V 17.5 V 60 IC, COLLECTOR CURRENT (AMPS) 15 V TJ = 125C 50 40 12.5 V 30 20 10 0 10 V VGE = 20 V 17.5 V 15 V 0 2 4 6 8 0 2 4 6 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics, TJ = 25C 60 IC, COLLECTOR CURRENT (AMPS) VCE = 10 V 250 s PULSE WIDTH TJ = 125C 40 VCE , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) 4 Figure 2. Output Characteristics, TJ = 125C VGE = 15 V 250 s PULSE WIDTH IC = 20 A 3 15 A 10 A 2 20 25C 0 5 6 7 8 9 10 11 12 13 14 15 1 - 50 0 50 100 150 VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 3. Transfer Characteristics Figure 4. Collector-to-Emitter Saturation Voltage versus Junction Temperature VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) 16 QT 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 TJ = 25C IC = 20 A Q1 Q2 10000 VCE = 0 V Cies TJ = 25C C, CAPACITANCE (pF) 1000 Coes 100 Cres 10 0 5 10 15 20 25 GATE-TO-EMITTER OR COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Variation Figure 6. Gate-to-Emitter Voltage versus Total Charge Motorola TMOS Power MOSFET Transistor Device Data 3 MGW20N120 TOTAL SWITCHING ENERGY LOSSES (mJ) 5 4 3 10 A 2 1 0 VCC = 720 V VGE = 15 V TJ = 25C TOTAL SWITCHING ENERGY LOSSES (mJ) 6 5 IC = 25 A VCC = 720 V VGE = 15 V RG = 20 4 IC = 20 A 15 A 3 15 A 2 10 A 1 10 15 20 25 30 35 40 45 50 0 25 50 75 100 125 150 RG, GATE RESISTANCE (OHMS) TC, CASE TEMPERATURE (C) Figure 7. Total Switching Losses versus Gate Resistance 5 VCC = 720 V VGE = 15 V RG = 20 TJ = 125C I , INSTANTANEOUS FORWARD CURRENT (AMPS) F 40 Figure 8. Total Switching Losses versus Case Temperature TOTAL SWITCHING ENERGY LOSSES (mJ) 4 30 TJ = 125C 20 TJ = 25C 10 3 2 1 10 12 14 16 18 20 0 0 1 2 3 4 5 IC, COLLECTOR-TO-EMITTER CURRENT (AMPS) VFM, FORWARD VOLTAGE DROP (VOLTS) Figure 9. Turn-Off Losses versus Collector-to-Emitter Current 100 Figure 10. Maximum Forward Drop versus Instantaneous Forward Current IC, COLLECTOR-TO-EMITTER CURRENT (A) 10 1 VGE = 15 V RGE = 20 TJ = 125C 1 10 100 1000 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) 0.1 Figure 11. Reverse Biased Safe Operating Area 4 Motorola TMOS Power MOSFET Transistor Device Data MGW20N120 1.0 D = 0.5 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.01 1.0E-05 1.0E-04 1.0E-03 1.0E-02 t, TIME (s) 1.0E-01 t1 P(pk) RJC(t) = r(t) RJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 1.0E+00 1.0E+01 Figure 12. Thermal Response Motorola TMOS Power MOSFET Transistor Device Data 5 MGW20N120 PACKAGE DIMENSIONS 0.25 (0.010) M -Q- TBM -T- E -B- U C 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E F G H J K L P Q R U V MILLIMETERS MIN MAX 20.40 20.90 15.44 15.95 4.70 5.21 1.09 1.30 1.50 1.63 1.80 2.18 5.45 BSC 2.56 2.87 0.48 0.68 15.57 16.08 7.26 7.50 3.10 3.38 3.50 3.70 3.30 3.80 5.30 BSC 3.05 3.40 GATE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX 0.803 0.823 0.608 0.628 0.185 0.205 0.043 0.051 0.059 0.064 0.071 0.086 0.215 BSC 0.101 0.113 0.019 0.027 0.613 0.633 0.286 0.295 0.122 0.133 0.138 0.145 0.130 0.150 0.209 BSC 0.120 0.134 L A R 1 2 3 K P -Y- F D 0.25 (0.010) M V G H J YQ S CASE 340F-03 TO-247AE ISSUE E STYLE 4: PIN 1. 2. 3. 4. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 or 602-303-5454 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola TMOS Power MOSFET TransistorMGW20N120/D Device Data *MGW20N120/D* |
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